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| C-band InGaAsP strained MQW FP LD TO KLT-4CB413G Description KLT-4CB413G is long wavelength Fabry-Perot AR LD source in TO-56 package with flat window cap. KLT-4CB413G consists of an InGaAsP strained multi-quantum well(MQW) laser diode and an InGaAs PIN-PD for output monitoring. It at C-band(1529~1559 nm) wavelength band and with data rate of 1.25Gbps. It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly) FEATURES High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with flat window cap High reliability and environmental endurance Operating wavelength of C-band(1530~1560 nm) Wide operating temperature range from 0 to 70 Data rates of 1.25Gbps APPLICATIONS SONET OC-1~ OC-48/SDH STM-1 ~ STM-16 155 Mbps, 622Mbps, and 1.25Gbps for WDM PON Suitable for fabrication of coaxial LD module, TOSA Absolute Maximum Ratings Parameter Operating temperature Storage temperature Peak laser output power Peak reverse laser voltage Peak forward monitor PD current Peak reverse monitor PD voltage Symbol Top Tstg Po Vrl Ifp Vrp Min 0 -20 Max 70 85 8 2 2 20 unit mW V mA V Optical and Electrical Characteristics (KLT-4CB413G, Top = 25 otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Top 0 70 Operating temperature Ith 13 20 mA CW, kink free Threshold current 32 Iop 28 CW, Po=3mW Operating current 0.19 0.21 CW, Po=3mW Slope efficiency Vop 1.5 V 1 at rated Po=3mW Operating voltage c nm at rated Po=3mW 1550 1555 1560 Center wavelength 12 nm at rated Po=3mW RMS spectral width tr 0.1 0.2 ns 20 to 80 %, Ib = Ith,Po=5mW Optical rise and fall time tr 0.1 0.2 ns 80 to 20 %, Ib = Ith,Po=5mW Im mA at rated Po=3mW , Vrp = 1V 0.1 0.11 Monitor PD current Id Vrp = 10V 0.1 uA Monitor PD dark current Cm Vrp = 10V, 1MHz 10 20 pF Monitor PD capacitance Specifications are subject to change without notice. 1/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev. 001 C-band InGaAsP strained MQW FP LD TO KLT-4CB413G Outline Drawing Pin connections Pin config. pin no. 1 pin no. 2 pin no. 3 pin no. 4 4S Case ground LD cathode m-PD anode LD anode/m-PD cathode 4G LD anode/case ground LD cathode Monitor PD cathode Monitor PD anode Ordering information KLT Device Type 1 : FP(BH) 2 : DFB Wavelength 31 : 1310 nm 55 : 1550 nm xx:1xx0nm 3nm(CWDM) yB(band):O,E,S,C,L,NI,NC Data Rate Operating Temp. Package type 1 : 1.5 mm ball lens 2 : 2.0mm ball lens 3 : flat window 4 : aspheric lens Pin Config. S : 4S type G : 4G type R : 4R type 3: 3G Kodenshi LD TO 4 : 1.25 Gbps 2 : -20~70 5 : 2.5 Gbps 4 : -20~85 5 : -40~85 3 : CWDM-DFB 49 : 1490 nm 4 : AR LD 2/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev. 001 |
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